I-OSRAM Opto Semiconductors ithe ihola ithimba labacwaningi elixhaswe nguhulumeni ukuze lithuthukise ngokuhlanganyela i-chip ehola amandla aphezulu, egxile emakethe ye-ultraviolet (UV). Ukukhanya kwe-Ultraviolet kungasetshenziswa ezinhlelweni ezahlukahlukene, njengokulapha (ukomisa), ukukhipha amagciwane, ukukhiqiza, umuthi kanye nesayensi yezempilo. Imithombo yokukhanya yendabuko engeyona i-LED, njengamalambu e-mercury vapor, inezingozi ezithile ezingaba khona. Ngaphezu kwalokho, ama-chips amaningi e-UV LED emakethe akhipha ukukhanya kwamanye amaza awusizo ngaphandle kwenzuzo yezindleko.I-OSRAM ithe: "umgomo wokubambisana kwethu ukuhlinzeka ngama-UV LEDs anamandla ukuze amboze izinhlelo zokusebenza ezihlukahlukene." lawa ma-LED ekugcineni azothatha indawo yomthombo wokukhanya we-UV wendabuko oqukethe i-mercury. "I-OSRAM ithe i-chip entsha yamandla aphezulu "ingase futhi ivule izinkambu zezicelo ezintsha."

I-UV iyinkambu evelayo yabakhiqizi be-LED. Abahlinzeki bahlanganisa i-rayvio, i-Nikkiso, i-vial vio, ubuchwepheshe be-sensor electronic, i-LG Innotek, njll.Iqembu locwaningo eliholwa yi-OSRAM lixhaswe yi-German Federal Ministry of Education and Research (BMBF). Ithemba ukuthuthukisa i-prototype enobude obungamaza obungama-250nm ukuya ku-310nm ngo-2020, emboza izibonisi ze-UV-B kanye ne-UV-C. Ngokuvamile, ububanzi bokukhanya kwe-ultraviolet cishe bungu-100 nm kuya ku-380 noma 400 nm. Yigagasi elifushane ingxenye engabonakali ye-spectrum.

I-OSRAM ikhiphe isithombe se-UV LED chip esathuthukiswayo. Isithombe sivela ku-Ferdinand Braun Institut, Leibniz Institut fur hochstfrequenztechnik (FBH) of Leibniz Federation in Germany.Enye yezinselelo ukuthuthukisa ukusebenza kahle kwe-UV-B kanye ne-UV-C spectra, edinga ukuphumelela ezintweni kanye nokwelula izinhlelo zokusebenza kunokwelapha kwe-UV-A. Iqembu eliholwa yi-OSRAM lisebenzisa uhlelo lwezinto ze-gallium aluminium nitride (AlGaN). Ngaphezu kwe-OSRAM, amanye amaqembu amane ocwaningo yilawa: Ferdinand Braun Institut, ILeibniz Institut fur hochstfrequenztechnik (FBH)); IBerlin Institute of Technology; LayTec AG; Futhi i-FBH ihlukanise uvphotonics NT GmbH.

I-OSRAM ibophezelekile kububanzi obungu-270-290-nm, i-FBH icubungula i-epitaxy ebangeni elingu-290-310nm, futhi icubungula i-epitaxial wafer ku-chip ye-UV; I-Berlin Polytechnic University inobuchwepheshe emkhakheni we-AlGaN, igxile ebangeni le-250-270 nm; I-Laytec inikeza ubuchwepheshe bokulawula izinhlelo ze-epitaxial kanye ne-plasma etching; Idizayini ye-chip elungiselelwe i-FBH, egxile ekupholiseni okuphezulu kwamanje nokusebenza kahle. Ngaphezu kwalokho, iqoqa idatha yenqubo evela kwabanye ozakwethu futhi iyinikeze ithimba labacwaningi. I-OSRAM ithe: "ukukhanya okukhipha ukukhanya kwe-LED entsha kulindeleke ukuthi kudlule i-120 MW 300 ± 10 nm, 140 MW at 280 ± 10 nm kanye 80 MW at 260 ± 10 nm." ithimba locwaningo futhi lenza ukuthuthukiswa okuphawulekayo ekuziphatheni kokuguga kwama-LED ukuze akwazi ukusebenza isikhathi eside nangokonga kakhulu. "