Imigqa yamakhono okukhanyisa ubuhlalu be-LED ihlanganiswe nesandiso, i-substrate, ukupakisha, ubuhlalu besibani se-LED esikhanyayo esimhlophe, njll. Ubuhlalu belambu le-LED elibomvu, eliluhlaza, neliluhlaza okwesibhakabhaka liyinhlanganisela yomjaho ye-III-V njenge-phosphorus, i-arsenic, i-nitrogen, njll. GAN) nezinye izinhlelo ze-semi-guidance. 1. Amakhono entengo yobuhlalu besibani se-LED enwetshiwe yobuhlalu besibani se-LED iminyaka engaphezu kweshumi enze ngcono inqubo yokukhula ngenqubo yokuthuthukisa. Kodwa-ke, i-nitrogen galfa gan yobuhlalu obukhanyayo obumhlophe obujwayelekile kanye ne-lattice phakathi kwe-substrate ne-coefficient engagculisi ye-coefficient yokwandisa ukushisa kusabangela ukuminyana kwephutha eliphezulu kakhulu. Isikhathi eside, bekuwukufunda ikhono lobuhlalu besibani se-LED ukuze kuncishiswe ukuminyana futhi kuthuthukiswe ikhwalithi yekristalu yobuhlalu besibani se-LED kuze kube sebusuku kakhulu. Ukwandiswa kobuhlalu besibani se-LED wumnyango ogxilwe kuwo wobuhlalu besibani se-LED. Ubude begagasi, i-voltage eya phambili, ukukhanya, noma ivolumu ekhanyayo yobuhlalu besibani se-LED ngokuyisisekelo kuncike ezintweni ezibonakalayo. Amakhono okunweba kanye nemishini kuyisihluthulelo samakhono okukhiqiza ifilimu yokwandisa. I-Metal organic material qi deposition skills (MOCVD) ibalulekile ekukhuleni kokucaciswa kobuhlalu besibani se-III-LED. Ukungabikho kwe-lattice yangaphandle kusetshenziswa njengesikhungo esiyinhlanganisela engakhanyi engakhanyi, esinomthelela omkhulu kakhulu ekusebenzeni kokubona kwedivayisi. Isakhiwo sesandiso sobuhlalu besibani se-LED nocwaningo lwamakhono okunwetshwa: Amakhono okukhula obuhlalu besibani se-LED akhulelwe, kanye nenani elikhulu lemibhalo engezansi nezingxenye eziphansi ezingu-IN ze-Ingan pre-mounted stress.
“Ichibi lokugcina
”Bese ukushisisa nokukhulisa isendlalelo sesithiyo se-GAN ukuze kuthuthukiswe ikhwalithi yekristalu yesendlalelo sesithiyo, isendlalelo sesithiyo se-Ingaaln noma ingcindezi yokukhula yokukhula kwegridi. Isicupho se-quantum sinendawo yomthombo i-Ingan/Gan quantum trap. Indawo yomthombo kugxilwe kuyo ubuhlalu besibani se-LED. Isihluthulelo sokukhula kwe-Ingan quantum trap ukulawula ingcindezi ye-quantum trap, ukunciphisa imiphumela yemiphumela ye-polarization. Ukukhula kobuhlalu besibani se-LED eminyakeni edlule, isendlalelo sokunwetshwa kobuhlalu besibani se-LED namakhono okunweba sekuvuthiwe. Ukusebenza kahle kwe-quantum yangaphakathi yobuhlalu besibani se-LED sekufinyelele ngaphezu kwama-90%. Kodwa-ke, ocwaningweni lwamandla obuhlalu bezibani ze-LED, ukusebenza kahle kwe-quantum ekusungulweni komjovo wamanje wonyaka omdala kubalulekile, futhi kubizwa ngokuthi umphumela we-DROOP. Umthelela we-DROOP wobuhlalu besibani se-LED obusekelwe ku-GAN ekuqaleni uchemekile ekwenziweni kwasendaweni kwenkampani yenethiwekhi. Ukuhlolwa okusunguliwe kwamukela i-quantum trap ebanzi ukuze kuncishiswe ukuminyana kwenkampani yenethiwekhi futhi kuthuthukise ungqimba lwe-electronic interception lwendawo emise okuka-P. Amanye amakhono anemininingwane kusakhiwo sesandiso sobuhlalu belambu le-LED kanye nocwaningo lwamakhono okunwetshwa yilawa: Ukubukeka kokubukeka okumahhadla ubuhlalu belambu le-LED kulibaziseke ekubukekeni, okuhambisana ne-engeli yoshintsho ukuze kuvinjelwe ukubonakaliswa okugcwele kokukhanya. Umehluko phakathi kwenkomba ye-refractive kanye nempahla yokupakisha ubangelwa ukusuka komthombo womnyango uzoboniswa emuva kwesendlalelo esinwetshiwe. Inqubo ijeziswa ngokuqondile ngokulahlwa kokubukeka kwesandiso, futhi kulula ukucekela phansi isandiso somthombo wesandiso, futhi i-electrode esobala inzima kakhulu ukwakha. Umgwaqo onokwenzeka wokufinyelela ekubukekeni okumaholo ngoguquko lokunwetshwa kwesendlalelo sokulibaziseka sangaphandle. Amakhono okusebenza Ubuhlalu besibani se-LED Amakhono okukhumula i-sapphire substrate laser asekelwe ku-GAN yamakhono okunweba nokukhula alinganayo, isisekelo sokukhanya kwelaser ye-UV, ukuxebuka kwesendlalelo esincibilikayo. Ku-75%, iphindwe kathathu kuneyendabuko, futhi isungule umugqa wokukhiqiza. Ubuhlalu besibani se-LED buthela amakhono we-chip. Ngokusho kwedatha yenkampani ye-Lumileds, ubuhlalu besibani se-LED besafire substrate izinga lokukhula izikhathi ezingaba ngu-1.6. Ngokungeziwe ekukhanyeni okungaphambili kobuhlalu besibani se-LED, ngaphandle kokukhanya okungaphambili, ukukhanya kokuphuma kobunye ubuso kukhombisa ngangokunokwenzeka emuva esandisweni sesandiso, futhi ukunyuswa kokugcina kuvela ngaphambili ngaphambili. Ukwakheka okuncane kwamakristalu e-photon anezinhlangothi ezimbili zobuhlalu besibani seLyric kungadlula ukusebenza kahle kokukhanya okugxumayo. Ngo-September 2003, kwakhiwe ubuhlalu besibani se-LED obunobubanzi obuyi-microns engu-1.5 kanye nama-microns angu-0.5 ubude obungu-0.5 microns. Okwesibili, isisekelo se-chip sobuhlalu besibani se-LED sivame ukusebenzisa imigqa yamakhono esisekelo se-chip ngokuvamile sisebenzisa ama-sapphire substrates, ama-silicon carbide substrates, i-silicon substrate ubusuku beminyaka emithathu, kanye ne-nitride, i-zinc oxide nokunye okuthuthukisiwe. Kuhlangatshezwane nezidingo ze-substrate material: Ukungaguquguquki kwamakhemikhali kwe-lumine bead substrate kanye nongqimba lwe-membrane yangaphandle kuyafaniswa. I-substrate impahla kufanele ibe nokungaguquguquki okuhle kwamakhemikhali. Ukubonakaliswa kwamakhemikhali kokuzalanisa ulwelwesi kubangela ikhwalithi yolwelwesi oluqondile ukuthi luhlale phansi; I-substrate yobuhlalu besibani se-LED ifanelana ne-coefficient yokwanda okushisayo kwesendlalelo se-membrane eqondile, kanye nama-coefficients okwandisa okushisayo ahlukile. Ukucekelwa phansi kwedivayisi kucekelwe phansi; ukwakheka kwesisekelo sesibani se-LED kanye nongqimba lwe-membrane yangaphandle kufaniswe. Izwe lakithi lobuhlalu belambu le-LED amakhono e-silicon base ahlupheke ngenxa yokuthuthuka kwamakhono, futhi akhula aze asebenzise ukwakhiwa kwezakhiwo ekupheleni konyaka. Njengamanje, amasafire nama-silicon substrates asetshenziselwe ukuthengisa ubuhlalu besibani se-LED esekwe ku-GAN. Ezinye izinto ze-substrate ezingase zisetshenziselwe ubuhlalu belambu be-LED obusekelwe ku-GAN zihlukaniswa nempahla futhi zihambisana nama-GAN homogeneous substrates kanye nama-ZNO substrates.
![Ubuhlalu besibani se-LED -level Beading Lighting Technology Route Improvement Route 1]()
Umbhali: Tianhui-
Ukubulala Umoya
Umbhali: Tianhui-
Abakhiqizi be-UV Led
Umbhali: Tianhui-
Ukubulawa kwamanzi kwe-UV
Umbhali: Tianhui-
Isixazululo se-UV LED
Umbhali: Tianhui-
I-UV Led diode
Umbhali: Tianhui-
Abakhiqizi be-UV Led diodes
Umbhali: Tianhui-
Imodyuli ye-UV ehola
Umbhali: Tianhui-
UV LED yokuphrinta UV
Umbhali: Tianhui-
Isicupho somiyane se-UV LED