Tolika iTekhnoloji yokukhanyisa i-LED ukusuka kwiNqanaba leChip

Namhlanje, ngophuhliso oluqhubekayo lweteknoloji yokukhanyisa i-LED kunye nokubaluleka okunyukayo kwingxaki yamandla kuluntu, imboni yokukhanyisa i-LED iye yangenisa ixesha lokuqhuma okubanzi, ukutsala imali eninzi kunye namashishini. Ukususela kumbono wokuphuhliswa kweteknoloji yokukhanyisa i-LED, ukusuka kwimiba emithathu, enye inqanaba le-chip, elinye linqanaba lokupakisha, kwaye elinye linqanaba lesicelo. Inqanaba le-chip ligxile ikakhulu kwitekhnoloji ye-LED; umgangatho wepakethi ubukhulu becala ukuguqula iitshiphusi ze-LED zibe zizibane okanye imithombo yokukhanya engasetyenziselwa ukukhanyisa; Uphuhliso kunye nokusetyenziswa, uphuhliso kunye nokuphuculwa kobuchwephesha bokuvavanya umgangatho wokukhanya kokusingqongileyo. Kwinqanaba le-chip, amandla okuqhubela phambili ekuphuhliseni iteknoloji ye-chip ye-LED ihlala isekelwe ekufuneni ukukhanya okuphezulu kokukhanya. Itekhnoloji yokufakela yenye yeetekhnoloji eziphambili ezifumana ngoku iitshiphusi ze-LED ezisebenza ngamandla aphezulu. I-Sapphire kwi-substrate material kunye ne-laser lining technique (LLO) kunye ne-teknoloji entsha ye-keyhered yesakhiwo esime nkqo esixhasa izakhiwo ezithe nkqo ziya kuhlala zikhona. Lawula. Nangona kunjalo, kwikamva elingekude, i-metal semiconductor isakhiwo samkelwa ukuphucula uqhagamshelwano lwe-Ohm, ukuphucula umgangatho wekristale, ukuphucula izinga lokufuduka kombane kunye nokusebenza kakuhle kwenaliti yombane. Ukusebenza kakuhle, ukusebenza ngokupheleleyo kokukhanya okumhlophe kwe-LED kunokufikelela kuma-52%. Ngokuphuculwa kweziphumo zokukhanya kwe-LED, kwelinye icala, i-chip iyancipha kwaye incinci, kwaye inani lee-chips ezinokunqunyulwa kwisayizi ethile lingaphezulu nangaphezulu, ngaloo ndlela linciphisa ixabiso le-chip enye. Kwelinye icala Ukuba ngoku i-3W, iya kuphuhliswa kwi-5W kunye ne-10W kwixesha elizayo. Oku kunokunciphisa inani leetshiphusi kunye nokunciphisa iindleko zenkqubo yesicelo kwiindleko zeemfuno zokukhanyisa. Ngamafutshane, indlela eguqulweyo, amandla ombane aphezulu, kunye ne-silicon base nitride iya kuhlala isalathiso sophuhliso lwetshiphu yokukhanyisa ye-semiconductor.