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850Nm Infrared Light Emitting Diode, Which Can Achieve a Quasi -straight Beam!

Zhuhai manufacturers have launched 850nm infrared light -emitting diode, which uses precision optical design lenses to achieve a quasi -light beam. (Performance beam refers to a small beam radius that has a small beam divergence angle, so the beam radius will not change significantly after a certain dissemination distance (usually a laser beam). The length of length is longer than the idea of the idea. For example, a beam of 1064 nm beam, the beam radius of the beam at the waist is 1 mm, and its Ruili length is about 3 m in the air. Therefore Performance. Because Ruili's length is proportional to the square radius of the waist radius, the large waist radius is more conducive to the long distance of the beam.) Under the condition of 20mA, the peak emission wavelength isλThe typical value of p is 850nm and the typical value of radiation power is 5MW, which has the characteristics of long -term reliability and high power. 850Nm infrared light -emitting diode has excellent parallel light characteristics. It can be used not only as a parallel light LED for the encoder, but also can be used in industrial -grade fields such as motor and industrial equipment robots. 850Nm infrared light -emitting diode is encapsulated with glass lens to ensure the durability of the product. The 850Nm infrared light emitting diode material has the excellent characteristics of heterogeneity, so the 850nm infrared light emitting diode can obtain a large luminous intensity at a smaller voltage, thereby improving the overall system efficiency. In addition, when the positive current is 20mA, the minimum value of the 850nm infrared light emitting diode (the light point size measured at 4mm at the top of the lens) is only 4.0mm, and the typical value is 4.3mm. It is very suitable for applications with limited space. Essence The reverse voltage of the 850nm infrared light -emitting diodes is 5V, the positive current is 100mA, and the maximum value of the reverse current is 10μA, the power consumption is only 150mA, which can greatly reduce the power consumption of the system. Its operating temperature range is -30 C 100 C, which can provide accurate measurement results within the wide operating temperature range. 850Nm infrared light emitting diode manufacturers wholesale, Zhuhai manufacturer wholesale, good products are in Zhuhai. Product characteristics of manufacturer 850nm infrared light emitting diode: 1. Performance LED2, Peak Launch WaveleλP typical value of 850nm3, high power, high reliability 4. excellent parallel light characteristics 5, glass lens packaging 6. System efficiency high manufacturers 850nm infrared light emitting diode technical parameters: 1. reverse voltage: 5V2, forward current: 100mA3, reverse current (reverse voltage is 5V): maximum value is 10μA4, power consumption: 150mA5, storage temperature range: -40 110 6. Work temperature range: -30 100 7. When the forward current is 20mAλP: The typical value is 850nm9, the radiation power: the typical value is 5MW10, the spectrum bandwidth is 50 %: the typical value is 25nm11, the positive voltage: the typical value is 1.4V, the maximum value is 1.6V12, the effective size (at 4mm at the top of the lens Measured light spots): The minimum value is 4.0mm, and the typical value of 4.3mm manufacturer 850nm Infrastructure: 1. Coder 2, Electric 3, Industrial Equipment Robot choice high -quality LED lamp bead products, first choose the right right right, the right thing must be right Lighting bead manufacturers, preferably Zhuhai manufacturers, manufacturers specialize in the production of various patch, infrared, direct insertion and other lamp beads, support customization, real -time quotes, real -time remittances, high -quality wholesale, is your high -quality choice!

850Nm Infrared Light Emitting Diode, Which Can Achieve a Quasi -straight Beam! 1

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