DOWA UV LED
Wavelength-Specific Capabilities
308nm/310nm: Ideal for phototherapy research, material surface modification;
325nm/340nm: Suitable for fluorescence detection, material aging tests, and photobiology studies.
325nm/340nm: Suitable for fluorescence detection, material aging tests, and photobiology studies.
Multi-Package & Custom Advantages
Adaptable to diverse package types (per application requirements) with robust encapsulation for heat dissipation and environmental resistance. Seamless integration into lab devices and industrial equipment.
Custom Design + Turnkey Production
Professional tailored design + one-stop manufacturing—shortening development cycles and ensuring perfect compatibility with your systems.
Small（500μm×500μm）bare chip
| Peak Wavelength | λp（nm） | IF=20mA | 308 | 310 | 325 | 340 |
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| Power Output | Po（mW） | IF=20mA | 4.8 | 4.8 | 3.5 | 4.2 |
| IF=50mA | 12 | 12 | 8.7 | 10.5 | ||
| Standard Spec | Electrode | Au Pad |  |
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Middle（750μm×780μm）bare chip
| Peak Wavelength | λp（nm） | IF=100mA | 308 | 310 | 325 | 340 |
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| Power Output | Po（mW） | IF=100mA | 24 | 24 | 22 | 20 |
| Standard Spec | Electrode | Au Pad | |
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Large（1000μm×1000μm）bare chip
| Peak Wavelength | λp（nm） | IF=350mA | 308 | 310 | 325 | 340 |
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| Power Output | Po（mW） | IF=350mA | 70 | 70 | 85 | 130 |
| Standard Spec | Electrode | Au Pad | |
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| Peak Wavelength | 310nm, 325nm, 340nm | |||||
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| Product type | xFxVL- | xFxVL- | xFxVL- | xFxVL- | xFxVL- | xFxVL- |
| 1H321 | 1H331 | 1H211 | 1H411 | 1F111 | 1F131 | |
| Viewing half angle(° ) | 6 | 6 | 24 | 40 | 113 | 114 |
| Lends type | Hemi | Hemi | Hemi | Hemi | Flat | Flat |
| TO type | TO46S | TO39 | TO18 | TO18 | TO18 | TO39 |
| TO diameter (mm) | φ5 | φ9 | φ5 | φ5 | φ5 | φ9 |
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Middle power SMD（Middle size：750μm×780μm chip mounted）
| Peak Wavelength | λp（nm） | IF=100mA | 308 | 310 | 325 | 340 |
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| Power Output | Po（mW） | IF=100mA | 19 | 19 | 14 | 14 |
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High power SMD（Large size：1000μm×1000μm chip mounted）
| Peak Wavelength | λp（nm） | IF=350mA | 308 | 310 | 325 | 340 |
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| Power Output | Po（mW） | IF=350mA | 50 | 50 | 60 | 90 |
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Narrowest 35deg Middle power SMD（Middle size：750μm×780μm chip mounted）
| Peak Wavelength | λp（nm） | IF=100mA | 308 | 310 | 325 | 340 |
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| Power Output | Po（mW） | IF=100mA | 16 | 16 | 13 | 14 |
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Narrowest 35deg High power SMD（Large size：1000μm×1000μm chip mounted）
| Peak Wavelength | λp（nm） | IF=350mA | 308 | 310 | 325 | 340 |
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| Power Output | Po（mW） | IF=350mA | 43 | 43 | 50 | 80 |
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Narrowest 65deg Middle power SMD（Middle size：750μm×780μm chip mounted）
| Peak Wavelength | λp（nm） | IF=100mA | 308 | 310 | 325 | 340 |
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| Power Output | Po（mW） | IF=100mA | 18 | 18 | 14 | 14 |
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Narrower 65-70deg High power SMD（Large size：1000μm×1000μm chip mounted）
| Peak Wavelength | λp（nm） | IF=350mA | 308 | 310 | 325 | 340 |
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| Power Output | Po（mW） | IF=350mA | 47 | 47 | 55 | 85 |
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