DOWA SWIR LED Chip

Suitable for scenarios like semiconductor inspection, food quality analysis, and medical sensing.

Supports customization of parameters such as wavelength and power to adapt to various professional application needs.

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Elevate Your Detection.
Power Multi-Scenario Applications.

Your trusted DOWA SWIR LED chip solution—engineered for high performance, tailored for industrial & commercial needs.

High-Efficiency Sensing

Targeted 1.0–2.5μm wavelengths (1300nm/1460nm core bands) enable precise detection (wafer defects, food moisture)—delivering 46% higher radiant power vs. standard chips.

Multi-Scenario Application

Ideal for semiconductor inspection, food sorting, medical sensing, and material recycling—versatile for both high-speed production lines and compact wearable devices.

Flexible Customization

Support wavelength fine-tuning, power configuration, and scenario-specific adaptations—meet your exact SWIR application needs.

900nm~

Part No.	Characteristics				Dimensions
Part No.	λp[nm] If=20mA	Po[mW] If=20mA	Vf[V] If=20mA	Absolute Maximum Rating [mA]	Chip Size [μm]	Chip Thickness [μm]	Top-Side
I96J	900	3.5	1.6	100	320*320	160	N
FR4GF77	910	1.8	1.6	50	280*280	150	N
FP6RF86	940	0.9	1.4	50	370*370	280	P
FP6E	940	2.5	1.5	50	240*240	160	P
SA03S	950	8.4	1.6	120	350*350	180	N
SG01Q	950	8.2	1.6	100	320*320	100	N
S0FRS	950	7.0	1.5	120	350*350	180	N
S0ABS	950	5.8	1.5	50	250*250	180	N
S0ABQ	950	5.8	1.5	50	250*250	100	N
SG05Q	950	6.8	1.6	50	250*250	100	N
SK03S	980	7.6	1.6	120	350*350	180	N

1,000nm~

Part No.	Characteristics				Dimensions
Part No.	λp[nm] If=20mA	Po[mW] If=20mA	Vf[V] If=20mA	Absolute Maximum Rating [mA]	Chip Size [μm]	Chip Thickness [μm]	Top-Side
(NEW)SECSR	1,040	11.0	1.3	100	350*350	150	N
S8FRS	1,040	5.0	1.5	100	350*350	180	N
(NEW)SEC7R	1,040	7.3	1.3	100	250*250	150	N
(NEW)SSCSR	1,060	10.4	1.2	100	350*350	150	N
(NEW)SSC7R	1,060	7.0	1.2	100	250*250	150	N
S7FRS	1,070	5.0	1.5	100	350*350	180	N
(NEW)SRCSR	1,080	9.8	1.2	100	350*350	150	N
(NEW)SRC7R	1,080	7.1	1.2	100	250*250	150	N
(NEW)SUCSR	1,100	10.4	1.2	100	350*350	150	N
(NEW)SUC7R	1,100	7.0	1.2	100	250*250	150	N
(NEW)SVCSR	1,140	8.0	1.2	100	350*350	150	N
(NEW)SVC7R	1,140	6.1	1.2	100	250*250	150	N
E2AFRS	1,200	3.6	1.0	100	350*350	180	N
E2RF2S	1,200	5.2	1.0	100	350*350	180	N
E2RA2R	1,200	4.3	1.0	100	250*250	150	N
E3AFRS	1,300	3.5	1.0	100	350*350	180	N
E3RF2S	1,300	5.8	1.0	100	350*350	180	N
E3RA2R	1,300	4.4	1.0	100	250*250	150	N
E3HF2S	1,350	5.2	0.9	100	350*350	180	N
E3HA2R	1,350	4.1	0.9	100	250*250	150	N
E4AFRS	1,460	2.6	0.9	100	350*350	180	N
E4RF2S	1,460	4.5	0.9	100	350*350	180	N
E4RA2R	1,460	3.6	0.9	100	250*250	150	N

1,500nm~

Part No.	Characteristics				Dimensions
Part No.	λp[nm] If=20mA	Po[mW] If=20mA	Vf[V] If=20mA	Absolute Maximum Rating [mA]	Chip Size [μm]	Chip Thickness [μm]	Top-Side
E5AFRS	1,550	1.9	0.9	100	350*350	180	N
E5RF2S	1,550	3.7	0.9	100	350*350	180	N
E5RA2R	1,550	2.9	0.9	100	250*250	150	N
E6AFRS	1,650	1.9	0.9	100	350*350	180	N
E6RF2S	1,650	2.8	0.8	100	350*350	180	N
E6RA2R	1,650	2.2	0.9	100	250*250	150	N
E7AFRS	1,720	1.8	0.8	100	350*350	180	N
(NEW)E7RF2S	1,720	2.5	0.8	100	350*350	180	N
E9AF1S	1,900	1.3	0.8	100	350*350	180	N
E9RF2S	1,900	2.1	0.8	100	350*350	180	N
E9RA2R	1,900	1.5	0.8	100	250*250	150	N